Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/15457
Title: Highly mobile and reactive state of hydrogen in metal oxide semiconductors at room temperature
Authors: Chen, WP
He, KF
Wang, Y 
Chan, HLW 
Yan, Z
Issue Date: 2013
Source: Scientific reports, 6 2013, v. 3, no. , p. 1-5
Abstract: Hydrogen in metal oxides usually strongly associates with a neighboring oxygen ion through an O-H bond and thus displays a high stability. Here we report a novel state of hydrogen with unusually high mobility and reactivity in metal oxides at room temperature. We show that freshly doped hydrogen in Nb 2 O 5 and WO 3 polycrystals via electrochemical hydrogenation can reduce Cu 2+ ions into Cu 0 if the polycrystals are immersed in a CuSO 4 solution, while this would not happen if the hydrogenated polycrystals have been placed in air for several hours before the immersion. Time-dependent studies of electrochemically hydrogenated rutile single crystals reveal two distinct states of hydrogen: one as protons covalently bonded to oxygen ions, while the other one is highly unstable with a lifetime of just a few hours. Observation of this mobile and reactive state of hydrogen will provide new insight into numerous moderate and low temperature interactions between metal oxides and hydrogen.
Publisher: Nature Publishing Group
Journal: Scientific reports 
EISSN: 2045-2322
DOI: 10.1038/srep03149
Rights: This work is licensed under a Creative Commons Attribution 3.0 Unported license. Toview a copy of this license, visit http://creativecommons.org/licenses/by/3.0
The following publication Chen, W., He, K., Wang, Y. et al. Highly mobile and reactive state of hydrogen in metal oxide semiconductors at room temperature. Sci Rep 3, 3149 (2013) is available at https://dx.doi.org/10.1038/srep03149
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