Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/1470
| Title: | Process and apparatus for fabricating nano-floating gate memories and memory made thereby | Authors: | Dai, J Lu, X Lee, PF |
Issue Date: | 8-Sep-2009 | Source: | US Patent 7,585,721 B2. Washington, DC: US Patent and Trademark Office, 2009. | Abstract: | In a process for fabricating a nano-floating gate memory structure, a substrate and a nanocluster source are firstly provided. The nanocluster source is activated for generating a beam of nanoclusters towards the substrate, and at least part of the nanoclusters are received atop the substrate. Thereby, a plurality of nanoclusters of controllable size are formed atop the substrate. | Keywords: | Nanoclusters Semiconductor technology Nanocrystals Dielectrics |
Rights: | Assignee: The Hong Kong Polytechnic University. |
| Appears in Collections: | Patent |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| us7585721b2.pdf | 299.83 kB | Adobe PDF | View/Open |
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