Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/1470
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Dai, J | - |
dc.creator | Lu, X | - |
dc.creator | Lee, PF | - |
dc.date.accessioned | 2009-11-04T07:18:58Z | - |
dc.date.available | 2009-11-04T07:18:58Z | - |
dc.identifier.uri | http://hdl.handle.net/10397/1470 | - |
dc.language.iso | en | en_US |
dc.rights | Assignee: The Hong Kong Polytechnic University. | en_US |
dc.subject | Nanoclusters | en_US |
dc.subject | Semiconductor technology | en_US |
dc.subject | Nanocrystals | en_US |
dc.subject | Dielectrics | en_US |
dc.title | Process and apparatus for fabricating nano-floating gate memories and memory made thereby | en_US |
dc.type | Patent | en_US |
dc.description.otherinformation | US7585721; US7585721 B2; US7585721B2; US7,585,721; US 7,585,721 B2; 7585721; Application No. 11/124,379 | en_US |
dcterms.abstract | In a process for fabricating a nano-floating gate memory structure, a substrate and a nanocluster source are firstly provided. The nanocluster source is activated for generating a beam of nanoclusters towards the substrate, and at least part of the nanoclusters are received atop the substrate. Thereby, a plurality of nanoclusters of controllable size are formed atop the substrate. | - |
dcterms.bibliographicCitation | US Patent 7,585,721 B2. Washington, DC: US Patent and Trademark Office, 2009. | - |
dcterms.issued | 2009-09-08 | - |
dc.description.country | US | - |
dc.description.oa | Version of Record | en_US |
Appears in Collections: | Patent |
Files in This Item:
File | Description | Size | Format | |
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us7585721b2.pdf | 299.83 kB | Adobe PDF | View/Open |
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