Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/1470
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dc.contributorDepartment of Applied Physics-
dc.creatorDai, J-
dc.creatorLu, X-
dc.creatorLee, PF-
dc.date.accessioned2009-11-04T07:18:58Z-
dc.date.available2009-11-04T07:18:58Z-
dc.identifier.urihttp://hdl.handle.net/10397/1470-
dc.language.isoenen_US
dc.rightsAssignee: The Hong Kong Polytechnic University.en_US
dc.subjectNanoclustersen_US
dc.subjectSemiconductor technologyen_US
dc.subjectNanocrystalsen_US
dc.subjectDielectricsen_US
dc.titleProcess and apparatus for fabricating nano-floating gate memories and memory made therebyen_US
dc.typePatenten_US
dc.description.otherinformationUS7585721; US7585721 B2; US7585721B2; US7,585,721; US 7,585,721 B2; 7585721; Application No. 11/124,379en_US
dcterms.abstractIn a process for fabricating a nano-floating gate memory structure, a substrate and a nanocluster source are firstly provided. The nanocluster source is activated for generating a beam of nanoclusters towards the substrate, and at least part of the nanoclusters are received atop the substrate. Thereby, a plurality of nanoclusters of controllable size are formed atop the substrate.-
dcterms.bibliographicCitationUS Patent 7,585,721 B2. Washington, DC: US Patent and Trademark Office, 2009.-
dcterms.issued2009-09-08-
dc.description.countryUS-
dc.description.oaVersion of Recorden_US
Appears in Collections:Patent
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