Please use this identifier to cite or link to this item:
Title: Process and apparatus for fabricating nano-floating gate memories and memory made thereby
Authors: Dai, J 
Lu, X
Lee, PF
Keywords: Nanoclusters
Semiconductor technology
Issue Date: 8-Sep-2009
Source: US Patent 7,585,721 B2. Washington, DC: US Patent and Trademark Office, 2009. How to cite?
Abstract: In a process for fabricating a nano-floating gate memory structure, a substrate and a nanocluster source are firstly provided. The nanocluster source is activated for generating a beam of nanoclusters towards the substrate, and at least part of the nanoclusters are received atop the substrate. Thereby, a plurality of nanoclusters of controllable size are formed atop the substrate.
Rights: Assignee: The Hong Kong Polytechnic University.
Appears in Collections:Patent

Files in This Item:
File Description SizeFormat 
us7585721b2.pdf299.83 kBAdobe PDFView/Open
Show full item record

Page view(s)

Last Week
Last month
Checked on Oct 16, 2016


Checked on Oct 16, 2016

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.