Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/14259
Title: Temperature-dependent photoluminescence and electron field emission properties of AlN nanotip arrays
Authors: Ji, XH
Zhang, QY
Lau, SP 
Jiang, HX
Lin, JY
Issue Date: 2009
Source: Applied physics letters, 2009, v. 94, no. 17, 173106, p. 173106-1-173106-3
Abstract: Large-scale single-crystalline AlN nanotip arrays have been fabricated via a facile catalysis-free approach using AlCl3 powder and NH3 as starting materials. These nanotips exhibit an intense broad ultraviolet emission centered at 3.28 eV. The field emission features a notable electron current with a low turn-on field. The turn-on and threshold electric field are found to decrease substantially from 7.7 to 3.9 V/μm and 7.9 to 4.1 V/μm, respectively, while the estimated field enhancement factor increases from 483 to 1884 with increasing the ambient-temperature from room temperature to 573 K. The dependence of the photoluminescence and electron field emission with temperature and the possible mechanism involved has systematically been investigated and thus discussed.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.3126055
Rights: © 2009 American Institute of Physics.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in X. H. Ji et al., Appl. Phys. Lett. 94, 173106 (2009) and may be found at https://dx.doi.org/10.1063/1.3126055
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