Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/13603
Title: Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids
Authors: Zhou, Y
Han, ST
Sonar, P
Ma, X
Chen, J
Zheng, Z
Roy, VAL
Issue Date: 2015
Source: Scientific reports, 24 2015, v. 5, no. , p. 1-7
Abstract: The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.
Publisher: Nature Publishing Group
Journal: Scientific reports 
EISSN: 2045-2322
DOI: 10.1038/srep09446
Rights: This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
The following publication Zhou, Y., Han, S., Sonar, P. et al. Reversible Conversion of Dominant Polarity in Ambipolar Polymer/Graphene Oxide Hybrids. Sci Rep 5, 9446 (2015) is available at https://dx.doi.org/10.1038/srep09446
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