Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/13603
Title: Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids
Authors: Zhou, Y
Han, ST
Sonar, P
Ma, X
Chen, J
Zheng, Z
Roy, VAL
Issue Date: 2015
Publisher: Nature Publishing Group
Source: Scientific reports, 2015, v. 5, 9446 How to cite?
Journal: Scientific reports 
Abstract: The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.
URI: http://hdl.handle.net/10397/13603
EISSN: 2045-2322
DOI: 10.1038/srep09446
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