Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/117483
| Title: | HfO₂-based thin films and devices | Authors: | Li, X Park, MH Dai, JY Yin, Y |
Issue Date: | Nov-2025 | Source: | Journal of materiomics, Nov. 2025, v. 11, no. 6, 101125 | Publisher: | Elsevier BV | Journal: | Journal of materiomics | EISSN: | 2352-8478 | DOI: | 10.1016/j.jmat.2025.101125 | Rights: | © 2025 The Authors. Published by Elsevier B.V. on behalf of The Chinese Ceramic Society. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/). The following publication Li, X., Park, M. H., Dai, J.-Y., & Yin, Y. (2025). HfO2-based thin films and devices. Journal of Materiomics, 11(6), 101125 is available at https://doi.org/10.1016/j.jmat.2025.101125. |
| Appears in Collections: | Journal/Magazine Article |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 1-s2.0-S2352847825001157-main.pdf | 1.63 MB | Adobe PDF | View/Open |
Access
View full-text via PolyU eLinks 
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.