Construction of ferroelectric topological domains in freestanding epitaxial BiFeO₃ nanostructures

Abstract

Topological center domains in ferroelectric nanostructures have garnered considerable attention owing to their novel functionalities and potential applications in next-generation electronic devices. In this study, we demonstrate the stabilization of room-temperature topological center domains in freestanding epitaxial BiFeO3 nanoislands grown on a SrRuO3 bottom layer. Notably, we demonstrate electrically reversible control of highly conductive channels localized at center domain core regions through applied electric fields, establishing critical functionality for non-volatile memory applications. The realization of these switchable conductive states in transferable architectures further establishes a materials platform for integrating functional topological domains with flexible electronics.