High throughput characterization method of electrical and phonon properties by dielectric resonant spectroscopy

Abstract

With the advancement of Materials Genome Initiative, there is an urgent need fornondestructive, rapid characterization methods for obtaining electrical transportproperties and phonon information of materials. In this article, we develop amethod using the dielectric resonant spectroscopies of materials to derive criticalparameters such as conduction electron frequency, quantum relaxation time, andphonon frequency for metals and semiconductors. As a typical example, based onthe new approaches, we realized simultaneous extraction of carrier concentration nand electron-phonon relaxation time τe − p, and establish a new relationship ofτe − p ¼ C∗ ⋅ T − 1 ⋅ n − 1=3 for n-type doped silicon, where the true electron-phononcoupling constant C∗ is proposed for the first time. This innovative methodologyoffers significant potential for high-throughput screening of materials, expeditingthe development of next-generation electronic devices.