Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/114436
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Title: Planar hall effect and magnetoresistance effect in Pt/Tm₃Fe₅O₁₂ bilayers at low temperature
Authors: Liu, Y
Liang, J 
Xu, Z
Li, J
Ruan, J
Ng, SM 
Huang, C
Leung, CW 
Issue Date: Aug-2025
Source: Electronics (Switzerland), Aug. 2025, v. 14, no. 15, 3060
Abstract: Spin transport behaviors in heavy metal/ferromagnetic insulator (HM/FI) bilayers have attracted considerable attention due to various novel phenomena and applications in spintronic devices. Herein, we investigate the planar Hall effect (PHE) in Pt/Tm3Fe5O12 (Pt/TmIG) heterostructures at low temperatures; moment switching in the ferrimagnetic insulator TmIG is detected by using electrical measurements. Double switching hysteresis PHE curves are found in Pt/TmIG bilayers, closely related to the magnetic moment of Tm3+ ions, which makes a key contribution to the total magnetic moment of TmIG film at low temperature. More importantly, a magnetoresistance (MR) curve with double switching is found, which has not been reported in this simple HM/FI bilayer, and the sign of this MR effect is sensitive to the angle between the magnetic field and current directions. Our findings of these effects in this HM/rare earth iron garnet (HM/REIG) bilayer provide insights into tuning the spin transport properties of HM/REIG by changing the rare earth.
Keywords: Magnetoresistance
Planar Hall effect
Spintronic device
Tm3Fe5O12 thin film
Publisher: MDPI AG
Journal: Electronics (Switzerland) 
EISSN: 2079-9292
DOI: 10.3390/electronics14153060
Rights: Copyright: © 2025 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
The following publication Liu, Y., Liang, J., Xu, Z., Li, J., Ruan, J., Ng, S. M., Huang, C., & Leung, C. W. (2025). Planar Hall Effect and Magnetoresistance Effect in Pt/Tm3Fe5O12 Bilayers at Low Temperature. Electronics, 14(15), 3060 is available at https://doi.org/10.3390/electronics14153060.
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