Van der Waals interface between high-κ dielectrics and 2D semiconductors

Abstract

Atomically thin two-dimensional (2D) semiconductors are attractive channel materials for next-generation field-effect transistors (FETs). The highperformance 2D electronics requires high-quality integration of highdielectrics, which however remains a significant challenge. In this minireview, we provide a brief introduction on recent progress in the van der Waals (vdW) integration of high- dielectrics onto 2D semiconductors. We first highlight the importance of high- dielectric integration for 2D FETs. Next, we summarize the recent breakthroughs in the various vdW integrations of high- dielectrics with 2D semiconductors, along with their interfaces’ properties. Additionally, we examine the quasi-vdW integration of conventional high- dielectrics onto 2D semiconductors. Finally, we discuss the challenges and potential future research directions in this field.