Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/113347
| Title: | Response to “Comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/ n-GaN Schottky contacts | Authors: | Wang, RX Xu, SJ Beling, CD Cheung, CK |
Issue Date: | 22-Jan-2007 | Source: | Applied physics letters, 22 Jan. 2007, v. 90, no. 4, 046102 | Publisher: | AIP Publishing LLC | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | DOI: | 10.1063/1.2435356 | Rights: | © 2007 American Institute of Physics This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in R. X. Wang, S. J. Xu, C. D. Beling, C. K. Cheung; Response to “Comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/ n-GaN Schottky contacts [Appl. Phys. Lett. 90, 046101 (2007)]”. Appl. Phys. Lett. 22 January 2007; 90 (4): 046102 and may be found at https://doi.org/10.1063/1.2435356. |
| Appears in Collections: | Journal/Magazine Article |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 046102_1_online.pdf | 841.95 kB | Adobe PDF | View/Open |
Access
View full-text via PolyU eLinks 
Page views
28
Citations as of Aug 13, 2025
Downloads
2
Citations as of Aug 13, 2025
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.