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http://hdl.handle.net/10397/111415
| Title: | Ternary hypervalent silicon hydrides via lithium at high pressure | Authors: | Liang, T Zhang, Z Feng, X Jia, H Pickard, CJ Redfern, SAT Duan, D |
Issue Date: | Nov-2020 | Source: | Physical review materials, Nov. 2020, v. 4, no. 11, 113607 | Abstract: | Hydrogen is rarely observed as a ligand in hypervalent species, however, we find that high-pressure hydrogenation may stabilize hypervalent hydrogen-rich materials. Focusing on ternary silicon hydrides via lithium doping, we find anions composed of hypervalent silicon with H ligands formed under high pressure. Our results reveal two different hypervalent anions: layered SiH5- and tricapped triangular prismatic SiH62-. These differ from octahedral SiH62- described in earlier studies. In addition, there are further hydrogen-rich structures, Li3SiH10 and Li2SiH6++¦, which may be stabilized at high pressure. Our work provides pointers to future investigations on hydrogen-rich materials. | Publisher: | American Physical Society | Journal: | Physical review materials | EISSN: | 2475-9953 | DOI: | 10.1103/PhysRevMaterials.4.113607 | Rights: | ©2020 American Physical Society The following publication Liang, T., Zhang, Z., Feng, X., Jia, H., Pickard, C. J., Redfern, S. A. T., & Duan, D. (2020). Ternary hypervalent silicon hydrides via lithium at high pressure. Physical Review Materials, 4(11), 113607 is available at https://doi.org/10.1103/PhysRevMaterials.4.113607. |
| Appears in Collections: | Journal/Magazine Article |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| PhysRevMaterials.4.113607.pdf | 1.77 MB | Adobe PDF | View/Open |
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