Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/111200
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Title: High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films
Authors: Qian, JC
Jha, SK
Wang, BQ
Jelenković, EV 
Bello, I
Klemberg-Sapieha, JE
Martinu, L
Zhang, WJ
Issue Date: 10-Nov-2014
Source: Applied physics letters, 10 Nov. 2014, v. 105, no. 19, 192104, p. 192104-1 - 192104-5
Abstract: Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B4C target in an Ar/N2 gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ∼1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V.
Publisher: AIP Publishing LLC
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4901273
Rights: © 2014 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Qian, J. C., Jha, S. K., Wang, B. Q., Jelenković, E. V., Bello, I., Klemberg-Sapieha, J. E., Martinu, L., & Zhang, W. J. (2014). High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films. Applied Physics Letters, 105(19) and may be found at https://doi.org/10.1063/1.4901273.
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