Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/111190
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Title: Strain engineering of quasi-1D layered TiS₃ nanosheets toward giant anisotropic Raman and piezoresistance responses
Authors: Qin, JK
Sun, HL
Su, T
Zhao, W
Zhen, L
Chai, Y 
Xu, CY
Issue Date: 15-Nov-2021
Source: Applied physics letters, 15 Nov. 2021, v. 119, no. 20, 201903, p. 201903-1 - 201903-6
Abstract: Quasi-one-dimensional layered TiS3 nanosheets possess highly anisotropic physical properties. Herein, we reported the anisotropic strain response of Raman and the piezoresistance effect in layered TiS3 nanosheets. An attractive Gr€ uneisen parameter (cm) of 5.82 was achieved for AIII g mode in the b-axis strained TiS3 nanosheet, while a negligible value of cm was obtained when the strain is applied along the a-axis direction. We also revealed the opposite piezoresistive effect with strains applied along the two principal axes, demonstrating a gauge factor ratio of approximately 1:3.2. The giant anisotropy is attributed to the strain modulated bandgap, which was further confirmed by density functional theory calculations.
Publisher: AIP Publishing LLC
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/5.0069569
Rights: © 2021 Author(s). Published under an exclusive license by AIP Publishing.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Qin, J.-K., Sun, H.-L., Su, T., Zhao, W., Zhen, L., Chai, Y., & Xu, C.-Y. (2021). Strain engineering of quasi-1D layered TiS3 nanosheets toward giant anisotropic Raman and piezoresistance responses. Applied Physics Letters, 119(20) and may be found at https://doi.org/10.1063/5.0069569.
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