Influence of N₂ plasma treatment on properties of black phosphorus devices in space electronic systems

Abstract

In order to improve the country’s comprehensive national strength and seize space resources, the implementation of new space systems requires the use of advanced technology in key applications of microelectronics. To further improve device performance, black phosphorus (BP) is used to overcome feature size limitations for its atomic thickness. BP has excellent physical properties such as in-plane anisotropy, thickness-dependent direct band gap and high carrier mobility. However, the performance control of phosphene is a major challenge in practical applications. In order to tune the BP performance, various theoretical and experimental studies on the doping mechanism and strategies of BP have been proposed and reported. In this work, the performance of BP can be effectively tuned by N2 plasma treatment. By changing the power and processing time, the on-state current and mobility of the device can be effectively improved. This simple and efficient doping technique provides a valuable way to realize high performance BP thin film transistors.