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Title: Biaxial strain-induced strong enhancement of upconversion photoluminescence in lanthanide-doped ferroelectric thin films
Authors: Li, S
Chen, H
Zhao, Y
Chen, Z
Guo, EJ
Wu, Z
Zhang, Y
Tang, W
Hao, J 
Issue Date: 5-Jun-2019
Source: Journal of physics. D, Applied physics, 5 June 2019, v. 52, no. 23, 234002
Abstract: The ability to manipulate and enhance the optical properties in luminescent materials is of great interest for both scientific research and practical applications. Here we present a systematic study of the effect of biaxial strain on the upconversion photoluminescence properties in lanthanide-doped ferroelectric thin films. Through control of the c/a ratios of BaTiO3:Er films, the luminescent intensity of the films can be effectively increased by over seven times. The observed phenomenon can be understood in terms of the variation in crystal field around Er3+ ions induced by biaxial strain due to the lattice mismatch. Moreover, our results have bridged the identifications of lattice distortion and crystalline orientation through the light emission properties of lanthanide dopants. The intriguing interplay will aid further design of favorable lanthanide-doped phosphors via strain engineering.
Keywords: Biaxial strain engineering
Ferroelectric
Lanthanide-doped phosphors
Thin films
Upconversion photoluminescence
Publisher: Institute of Physics Publishing
Journal: Journal of physics. D, Applied physics 
ISSN: 0022-3727
EISSN: 1361-6463
DOI: 10.1088/1361-6463/ab08d1
Rights: © 2019 IOP Publishing Ltd
This is the Accepted Manuscript version of an article accepted for publication in Journal of physics. D, Applied physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6463/ab08d1.
This manuscript version is made available under the CC-BY-NC-ND 4.0 license (https://creativecommons.org/licenses/by-nc-nd/4.0/).
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