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Title: Photoresponse of wafer-scale palladium diselenide films prepared by selenization method
Authors: Mak, CH 
Lin, S 
Rogée, L 
Lau, SP 
Issue Date: 6-Feb-2020
Source: Journal of physics. D, Applied physics, 6 Feb. 2020, v. 53, no. 6, 65102
Abstract: Palladium diselenide (PdSe2) films exhibit a high charge carrier mobility and sensitivity in photodetection. In this work, wafer-scale PdSe2 thin films with controllable thickness have been synthesized by the selenization of Pd films. A PdSe2-based photodetector can detect a broad wavelength ranging from 420 nm to 1200 nm. The responsivity and detectivity can reach 1.96 × 103 A W-1 and 1.72 × 1010 W Hz-1/2 at V SD = 3 V, respectively. The figure of merit of the photodetection are comparable to the mechanically exfoliated PdSe2 based photodetector. This work demonstrated that selenization is a facile method to synthesize PdSe2 films in large scale and the films are promising for broadband photodetection.
Keywords: 2D layered material
Field effect transistors
Palladium diselenide
Photodetection
Publisher: Institute of Physics Publishing
Journal: Journal of physics. D, Applied physics 
ISSN: 0022-3727
EISSN: 1361-6463
DOI: 10.1088/1361-6463/ab57a8
Rights: © 2019 IOP Publishing Ltd
This is the Accepted Manuscript version of an article accepted for publication in Journal of physics. D, Applied physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6463/ab57a8.
This manuscript version is made available under the CC-BY-NC-ND 4.0 license (https://creativecommons.org/licenses/by-nc-nd/4.0/).
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