Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/96407
| DC Field | Value | Language |
|---|---|---|
| dc.contributor | Department of Mechanical Engineering | en_US |
| dc.creator | Leung, WFW | en_US |
| dc.creator | Wang, J | en_US |
| dc.creator | Yang, L | en_US |
| dc.date.accessioned | 2022-12-02T08:16:09Z | - |
| dc.date.available | 2022-12-02T08:16:09Z | - |
| dc.identifier.uri | http://hdl.handle.net/10397/96407 | - |
| dc.language.iso | en | en_US |
| dc.rights | Assignee: The Hong Kong Polytechnic University | en_US |
| dc.title | Crystal control and stability for high-performance perovskite solar cell | en_US |
| dc.type | Patent | en_US |
| dc.description.otherinformation | US11217751; US11217751 B2; US11217751B2; US11,217,751; US11,217,751 B2; 11217751; Appl. No. 14/676828 | en_US |
| dcterms.abstract | PbI.sub.2 thin film crystallization control is prerequisite of high-quality perovskite layer for the sequentially solution-processed perovskite solar cells. According to the present invention, an efficient-and-simple method has been developed by adding halogen acid additive to improve perovskite thin-film quality and an efficiency of at least 15.2% is obtained. This approach improves coverage, uniformity and stability of pervoskite thin-film. In addition, a nanofiber scaffold is incorporated into the perovskite layer so as to reduce the amount of grain boundaries, thus substantially reducing electron recombination within these boundaries. | en_US |
| dcterms.accessRights | open access | en_US |
| dcterms.bibliographicCitation | US Patent 11,217,751 B2. Washington, DC: US Patent and Trademark Office, 2022 | en_US |
| dcterms.issued | 2022-01-04 | - |
| dc.description.country | US | - |
| dc.description.validate | 202211 bcch | en_US |
| dc.description.oa | Version of Record | en_US |
| Appears in Collections: | Patent | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| us11217751b2.pdf | 3.73 MB | Adobe PDF | View/Open |
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