Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/96407
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dc.contributorDepartment of Mechanical Engineeringen_US
dc.creatorLeung, WFWen_US
dc.creatorWang, Jen_US
dc.creatorYang, Len_US
dc.date.accessioned2022-12-02T08:16:09Z-
dc.date.available2022-12-02T08:16:09Z-
dc.identifier.urihttp://hdl.handle.net/10397/96407-
dc.language.isoenen_US
dc.rightsAssignee: The Hong Kong Polytechnic Universityen_US
dc.titleCrystal control and stability for high-performance perovskite solar cellen_US
dc.typePatenten_US
dc.description.otherinformationUS11217751; US11217751 B2; US11217751B2; US11,217,751; US11,217,751 B2; 11217751; Appl. No. 14/676828en_US
dcterms.abstractPbI.sub.2 thin film crystallization control is prerequisite of high-quality perovskite layer for the sequentially solution-processed perovskite solar cells. According to the present invention, an efficient-and-simple method has been developed by adding halogen acid additive to improve perovskite thin-film quality and an efficiency of at least 15.2% is obtained. This approach improves coverage, uniformity and stability of pervoskite thin-film. In addition, a nanofiber scaffold is incorporated into the perovskite layer so as to reduce the amount of grain boundaries, thus substantially reducing electron recombination within these boundaries.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationUS Patent 11,217,751 B2. Washington, DC: US Patent and Trademark Office, 2022en_US
dcterms.issued2022-01-04-
dc.description.countryUS-
dc.description.validate202211 bcchen_US
dc.description.oaVersion of Recorden_US
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