Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/83
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dc.contributorDepartment of Applied Biology and Chemical Technology-
dc.contributorDepartment of Industrial and Systems Engineering-
dc.creatorMan, HC-
dc.creatorNg, WY-
dc.creatorYeung, CH-
dc.creatorLee, CY-
dc.creatorSiu, CL-
dc.creatorTsui, RYC-
dc.creatorYeung, KLK-
dc.date.accessioned2008-10-29T08:11:53Z-
dc.date.available2008-10-29T08:11:53Z-
dc.identifier.urihttp://hdl.handle.net/10397/83-
dc.language.isoenen_US
dc.rightsAssignee: The Hong Kong Polytechnic University.en_US
dc.rightsAssignee: Hong Kong Productivity Council.en_US
dc.subjectCobalt-tungsten-phosphorus alloyen_US
dc.subjectBarrier coatingsen_US
dc.titleCobalt-tungsten-phosphorus alloy diffusion barrier coatings, methods for their preparation, and their use in plated articlesen_US
dc.typePatenten_US
dc.description.otherinformationInventor name used in this publication: Hau-chung Manen_US
dc.description.otherinformationUS6528185; US6528185 B2; US6528185B2; US6,528,185; US6,528,185; US 6,528,185 B2; 6528185; Application No. 09/794,395en_US
dcterms.abstractTechniques are provided for electrolessly depositing and electrodepositing CoWP barrier coating onto copper or copper alloys to prevent copper diffusion when forming layers on articles such as watch bracelets, watch cases, imitation jewelry, spectacle frames and metal buttons.-
dcterms.bibliographicCitationUS Patent 6,528,185 B2. Washington, DC: US Patent and Trademark Office, 2003.-
dcterms.issued2003-03-04-
dc.description.countryUS-
dc.description.oaVersion of Recorden_US
Appears in Collections:Patent
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