Please use this identifier to cite or link to this item:
Title: Fabrication and characterization of ferroelectric field effect transistor
Authors: So, King-sing
Degree: M.Phil.
Issue Date: 2001
Abstract: Manganese oxide La0.7Sr0.3MnO3 (LSMO) films and all-perovskite epitaxial Pb(Zr0.52Ti0.48)O3 (PZT)/La0.7Sr0.3MnO3 heterostructure on single crystal LaAlO3 (LAO) substrates have been fabricated by Pulsed Laser Deposition (PLD) method. It is found that the electrical transport properties of LSMO is very sensitive to the film's oxygen content, which can be tuned easily during deposition by controlling the ambient oxygen pressure. They are, however, very stable and remain unchanged in further thermal treatments. Epitaxial LSMO films are obtained at processing temperature as low as 500oC. Excellent crystalline quality of PZT(500 nm)/LSMO(40 nm) heterostructures have been realized. High remnant polarization (48 uC/cm2), low coercive field (57 kV/cm), low polarization loss (~8% up to 2x109 switching cycles) and long retention (>105s) are demonstrated for the ferroelectric PZT films. The leakage current in the Au/PZT/LSMO structure is about 5X10-7 A/cm2. The results of both structural and electrical properties of PZT/LSMO heterostructures show that this material system is a suitable candidate for use in non-volatile ferroelectric field effect transistor (FeFET). A small remnant field effect modulation (5.6%) has been obtained and further optimizations in developing FeFET are using PZT/LSMO heterostructures suggested.
Subjects: Ferroelectricity
Hong Kong Polytechnic University -- Dissertations
Pages: v, 103 leaves : ill. ; 30 cm
Appears in Collections:Thesis

Show full item record

Page views

Last Week
Last month
Citations as of Jun 4, 2023

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.