Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/6297
| Title: | Fabrication of piezoelectric single crystalline thin layer on silicon wafer | Authors: | Peng, J Chao, C Dai, J Chan, HLW |
Issue Date: | 17-Sep-2013 | Source: | US Patent 8,536,665 B2. Washington, DC: US Patent and Trademark Office, 2013. | Abstract: | The present invention relates a method of fabricating a piezoelectric device through micromachining piezoelectric-on-silicon wafer. The wafers are constructed so that piezoelectric layer is a single wafer having a thin layer from 5 to 50 μm. | Rights: | Assignee: The Hong Kong Polytechnic University. |
| Appears in Collections: | Patent |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| us8536665b2.pdf | 373.68 kB | Adobe PDF | View/Open |
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