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| Title: | Nanoscale ferroelectric tunnel junctions based on ultrathin BaTiO₃film and Ag nanoelectrodes | Authors: | Gao, XS Liu, JM Au, K Dai, J |
Issue Date: | 1-Oct-2012 | Source: | Applied physics letters, 1 Oct. 2012, v. 101, no. 14, 142905, p. 1-5 | Abstract: | In this work, Ag nanoisland electrodes (nanoelectrodes) have been deposited on top of ultrathin ferroelectric BaTiO₃ (BTO) films to form a nanoscale metal-ferroelectric-metal tunnel junction by integrating growth techniques of nanocluster beam source and laser-molecular beam epitaxy. The ultrathin BTO films (∼3 nm thick) exhibit both apparent ferroelectric polarization reversal and ferroelectric tunneling related resistive switching behaviors. The introducing of Ag nanoislands (∼20 nm in diameter) as top electrode substantially enhances the tunneling current and alters the symmetry of I-V hysteresis curves. The enhanced tunneling current is likely due to the reduction in tunneling barrier height and an increase in effective tunneling area by Ag nano-electrodes, while the improved symmetric in I-V curve may be attributed to the variation of electrode-oxide contact geometry. | Keywords: | Barium compounds Electric current Electrodes Ferroelectric thin films Laser materials processing Molecular beam epitaxial growth Nanostructured materials Silver Tunnelling |
Publisher: | American Institute of Physics | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | DOI: | 10.1063/1.4756918 | Rights: | © 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. S. Gao et al., Appl. Phys. Lett. 101, 142905 (2012) and may be found at http://link.aip.org/link/?apl/101/142905 |
| Appears in Collections: | Journal/Magazine Article |
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| Gao_Nanoscale_Ferroelectric_Tunnel.pdf | 2.74 MB | Adobe PDF | View/Open |
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