Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4204
PIRA download icon_1.1View/Download Full Text
Title: Critical thickness for dislocation generation during ferroelectric transition in thin film on a compliant substrate
Authors: Zheng, Y
Wang, B
Woo, CH 
Issue Date: 21-Aug-2006
Source: Applied physics letters, 21 Aug. 2006, v. 89, no. 8, 083115, p. 1-3
Abstract: The formation energy of misfit dislocations in a ferroelectric thin film grown on compliant substrate is calculated based on the Landau-Devonshire formalism and Timosheko’s method for thermal stresses. The critical thickness is shown to change significantly according to the polarization in the film, leading to serious concerns, particularly for thick substrates, in the device design stage.
Keywords: Ferroelectric thin films
Dislocations
Thermal stresses
Dielectric polarisation
Ferroelectric transitions
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.2338515
Rights: © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Zheng, B. Wang & C. H. Woo, Appl. Phys. Lett. 89, 083115 (2006) and may be found at http://apl.aip.org/resource/1/applab/v89/i8/p083115_s1
Appears in Collections:Journal/Magazine Article

Files in This Item:
File Description SizeFormat 
Zheng_Thickness_Ferroelectric_Film.pdf294.52 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show full item record

Page views

122
Last Week
1
Last month
Citations as of Mar 24, 2024

Downloads

182
Citations as of Mar 24, 2024

SCOPUSTM   
Citations

26
Last Week
0
Last month
0
Citations as of Mar 28, 2024

WEB OF SCIENCETM
Citations

20
Last Week
0
Last month
0
Citations as of Mar 28, 2024

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.