Preparation method of two-dimensional indium selenide crystal material

Abstract

The invention relates to the field of preparation of two-dimensional materials, in particular to a preparation method of a two-dimensional indium selenide crystal material. According to the method provided by the invention, the centimeter-level two-dimensional indium selenide crystal material is synthesized through short-distance chemical vapor deposition, the beta-phase two-dimensional indium selenide crystal material can be obtained by taking In2O3 and elemental selenium as target materials, and the beta '-phase two-dimensional indium selenide crystal material can be obtained by taking In2O3, InSe and elemental selenium as target materials. The alpha-phase two-dimensional indium selenide crystal material can be obtained by releasing stress by taking the beta '-phase two-dimensional indium selenide crystal material as a precursor. The method provided by the invention can realize the synthesis of beta, beta 'and alpha phase two-dimensional indium selenide crystal materials with large area and high crystal phase purity. Experiments show that the centimeter-level pure beta, beta'and alpha-phase two-dimensional indium selenide crystal material is successfully synthesized through the method, and a field effect transistor prepared from the material is high in performance and has the potential of serving as a memory storage device. 本发明涉及二维材料的制备领域，具体是一种二维硒化铟晶体材料的制备方法。本发明提供的方法通过短距化学气相沉积合成厘米级二维硒化铟晶体材料，以In2O3和硒单质为靶材能够获得β相二维硒化铟晶体材料，以In2O3、InSe和硒单质为靶材能够获得β′相二维硒化铟晶体材料，以β′相二维硒化铟晶体材料为前驱体通过释放应力能够获得α相二维硒化铟晶体材料。本发明提供的方法能够实现大面积，高晶相纯度的β、β′和α相二维硒化铟晶体材料的合成。实验表明，通过本发明的方法成功合成了厘米级纯β、β′和α相的二维硒化铟晶体材料，用其制备的场效应晶体管性能高，具有作为记忆储存器件的潜力。