Local thinning method of two-dimensional tellurene

Abstract

The invention discloses a local thinning method of two-dimensional tellurene. The local thinning method of the two-dimensional tellurium ene comprises the following steps: providing the two-dimensional tellurium ene to be thinned; preparing a platinum layer at one end of the two-dimensional tellurene; soaking the two-dimensional tellurium ene prepared with the platinum layer in water, and irradiating with light; and after soaking for a preset time under a light irradiation condition, taking out and drying to obtain the locally thinned two-dimensional tellurium ene. According to the method, the two-dimensional tellurium ene is locally thinned by utilizing the photo-oxidation reaction of the two-dimensional tellurium ene under the catalysis of the metal platinum. According to the thinning method disclosed by the invention, the damage to the residual two-dimensional tellurene is small. In addition, the thinning method is easy to control, and the thinning thickness can be controlled by controlling the soaking time. Besides, the catalytic action of metal platinum is utilized, so that the thinning of the two-dimensional tellurene can be limited near a metal electrode, and the selective thinning of the two-dimensional tellurene can be realized by selecting the position of the metal electrode. 本发明公开一种二维碲烯的局部减薄方法。该二维碲烯的局部减薄方法，包括步骤：提供待减薄的二维碲烯；在所述二维碲烯的一端制备铂层；将制备有铂层的二维碲烯浸泡在水中，并采用光照射；在光照射条件下浸泡预定时间后，取出并干燥，得到局部减薄的二维碲烯。本发明利用二维碲烯在金属铂的催化下发生的光氧化反应，实现了二维碲烯的局部减薄。本发明该减薄方法，其对剩余的二维碲烯的损伤小。另外，该减薄方法控制容易，通过控制浸泡时间即可控制减薄的厚度。此外，本发明利用金属铂的催化作用，使得二维碲烯的减薄能够局限在金属电极附近，通过选择金属电极位置能够实现二维碲烯选择性的减薄。