Forming method of magnetic random access memory device and magnetic random access memory device

Abstract

The invention relates to the technical field of magnetic random access memory devices, in particular to a forming method of a magnetic random access memory device and the magnetic random access memory device. The forming method of the magnetic random access memory device comprises the following steps: forming a memory device array layer, namely forming a topology layer; sequentially forming magnetic tunnel junction layers and a third electrode layer in a full Van der Waals interlayer relationship on the surface of the topological layer; the magnetic tunnel junction at least comprises a first magnetic layer on the surface of the topological layer and a second magnetic layer far away from the topological layer; etching the structure on the surface of the topological layer to form a nanorod shape; forming a first electrode and a second electrode at two ends of the topological layer; the topological layer and each layer in the magnetic tunnel junction are made of two-dimensional materials. According to the forming method provided by the invention, the full Van der Waals heterojunction structure can be stably formed, the accurate regulation and control capability of performance parameters is high, the thermal stability is high, the service life is long, and the method can be widely applied to low-power-consumption and high-performance chip integration. 本发明涉及磁性随机存储器件技术领域，具体涉及磁性随机存储器件的形成方法和磁性随机存储器件。本发明的磁性随机存储器件的形成方法包括：形成存储器件阵列层，包括：形成拓扑层；在拓扑层表面依次形成全范德华层间关系的磁性隧道结各层以及第三电极层；磁性隧道结至少包括拓扑层表面的第一磁性层和远离拓扑层的第二磁性层；刻蚀拓扑层表面的结构，使之形成纳米柱形状；在拓扑层的两端形成第一电极和第二电极；其中，拓扑层和磁性隧道结中的各层的材料为二维材料。本发明提供的形成方法可以稳定的形成全范德华异质结结构，性能参数的精确调控能力强、热稳定性高、使用寿命长，能够广泛应用于低功耗高性能的芯片集成。