Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5369
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Title: Effect of strain and deadlayer on the polarization switching of ferroelectric thin film
Authors: Wang, J
Xia, Y
Chen, LQ
Shi, SQ 
Issue Date: 1-Dec-2011
Source: Journal of applied physics, 1 Dec. 2011, v. 110, no. 11, 114111, p. 1-7
Abstract: The effect of misfit strain and deadlayer on the polarization switching of epitaxial ferroelectric thin film is investigated using a phase field model. Simulation results show that a compressive misfit strain increases the coercive field and remanent polarization of ferroelectric thin film with deadlayers, whereas a tensile misfit strain decreases these factors. The presence of a deadlayer between the ferroelectric thin film and the electrode prevents charge compensation on the ferroelectric surface and reduces the coercive field and remanent polarization of the film. A periodic a/c/a/c multiple domain structure is found in ferroelectric thin film with tensile misfit strain when there is no deadlayer. However, when a deadlayer is present in the film, the c domains vanish and the out-of-plane component of polarization degrades. The degradation of the out-of-plane polarization makes ferroelectric thin films with tensile misfit strain and deadlayers lose their ferroelectric property in the thickness direction, which can be attributed to the combined effects of the deadlayer and tensile strain. The coercive field and remanent polarization of ferroelectric thin film decrease with the thickness of the deadlayer.
Keywords: Charge compensation
Electric domains
Epitaxial layers
Ferroelectric coercive field
Ferroelectric switching
Ferroelectric thin films
Remanence
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.3664913
Rights: © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Jie Wang et al., J. Appl. Phys. 110, 114111 (2011) and may be found at http://link.aip.org/link/?jap/110/114111.
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