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Title: Tunable electronic transport properties of DyScO₃/SrTiO₃ polar heterointerface
Authors: Li, DF
Wang, Y
Dai, J 
Issue Date: 21-Mar-2011
Source: Applied physics letters, 21 Mar. 2011, v. 98, 122108, p. 1-3
Abstract: Electronic transport properties of DyScO₃/SrTiO₃ polar heterointerface grown at different oxygen pressures are studied. This DyScO₃/SrTiO₃ polar heterointerface exhibits much higher charge mobility, up to 10⁴ cm² V⁻¹ s⁻¹, compared to the LaAlO₃/SrTiO₃ system due to relatively lower lattice mismatch between the film and substrate. More significantly, the DyScO₃ film deposited under 10⁻⁴ mbar oxygen pressure presents an interfacial metal-to-semiconductor conducting mechanism transition at 90 K. Field effect transport measurement results reveal that this transition can be modulated by field effect through controlling the electron doping level of the interface originated from interfacial electronic reconstruction.
Keywords: Carrier mobility
Doping profiles
Dysprosium compounds
Insulating thin films
Interface phenomena
Interface states
Metal-insulator transition
Strontium compounds
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.3570694
Rights: © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D. F. Li, Yan Wang, & J. Y. Dai, Appl. Phys. Lett. 98, 122108 (2011) and may be found at http://link.aip.org/link/?apl/98/122108
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