Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4245
PIRA download icon_1.1View/Download Full Text
Title: Interface-oxygen-loss-controlled voltage offsets in epitaxial Pb(Zr₀.₅₂Ti₀.₄₈)O₃ thin-film capacitors with La₀.₇Sr₀.₃MnO₃ electrodes
Authors: Wu, W
Wong, KH
Choy, CL 
Issue Date: 22-Nov-2004
Source: Applied physics letters, 22 Nov. 2004, v. 85, no. 21, p. 5013-5015
Abstract: Epitaxial Pb(Zr₀.₅₂Ti₀.₄₈)O₃(PZT) thin-film capacitors with La₀.₇Sr₀.₃MnO₃(LSMO) electrodes have been grown on (LaAlO₃)₀.₃(SrAl₀.₅Ta₀.₅O₃)₀.₇ (001) substrates by pulsed-laser deposition. The process-induced imprint behavior in the ferroelectric capacitors was examined by in situ and ex situ annealing at various conditions. It was found that for the capacitors in situ annealed at reduced oxygen pressures, where the LSMO electrodes are stable, voltage offsets in the polarization-electric field hysteresis loops were observed only for those treated at temperatures higher than the Curie temperature. At lower temperatures, the oxygen loss may be suppressed by stresses arising primarily from the paraelectric-to-ferroelectric transformation. However, for the capacitors ex situ annealed at the same low temperature, large voltage offsets were induced due to the oxygen instability of the LSMO electrodes. We show evidence that the imprint is caused by oxygen loss at the PZT∕LSMO interface, and closely related to the variation of the PZT structure.
Keywords: Lead compounds
Epitaxial layers
Ferroelectric thin films
Thin film capacitors
Ferroelectric capacitors
Electrodes
Dielectric polarisation
Dielectric hysteresis
Ferroelectric Curie temperature
Internal stresses
Lanthanum compounds
Strontium compounds
Annealing
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.1827929
Rights: © 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Wu, K. H. Wong & C. L. Choy, Appl. Phys. Lett. 85, 5013 (2004) and may be found at http://apl.aip.org/resource/1/applab/v85/i21/p5013_s1
Appears in Collections:Journal/Magazine Article

Files in This Item:
File Description SizeFormat 
Wu_Oxygen_Thin-film_Capacitors.pdf89.65 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show full item record

Page views

108
Last Week
0
Last month
Citations as of May 15, 2022

Downloads

155
Citations as of May 15, 2022

SCOPUSTM   
Citations

29
Last Week
0
Last month
0
Citations as of May 20, 2022

WEB OF SCIENCETM
Citations

26
Last Week
0
Last month
0
Citations as of May 19, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.