Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4244
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Title: Correlation between domain evolution and asymmetric switching in epitaxial Pb(Zr₀.₅₂Ti₀.₄₈)O₃ thin films
Authors: Wu, W
Wong, KH
Pang, GKH
Choy, CL 
Issue Date: 14-Feb-2005
Source: Applied physics letters, 14 Feb. 2005, v. 86, no. 7, 072904, p. 1-3
Abstract: The process-induced domain evolution and asymmetric switching in epitaxial Pb(Zr₀.₅₂Ti₀.₄₈)O₃(PZT) thin films have been studied by reciprocal space mapping, transmission electron microscopy, high-temperature x-ray diffraction, and the polarization-electric field hysteresis loop measurements. After annealing at reduced oxygen pressures, it was evidenced that an oxygen loss at the PZT bottom interface can occur at temperatures well below the Curie temperature T[sub C], and more importantly, the oxygen loss can induce a large positive voltage offset and drive simultaneously the polydomain formation in the PZT films. Our results indicate that the structure evolution is correlated with the coercive voltage shift, and an oxygen-loss-related internal stress at the interface would be responsible for the large internal electric field in epitaxial PZT films.
Keywords: Lead compounds
Ferroelectric thin films
Ferroelectric capacitors
Thin film capacitors
Epitaxial layers
Annealing
Electric domains
Ferroelectric switching
Dielectric hysteresis
Ferroelectric Curie temperature
Transmission electron microscopy
X-ray diffraction
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.1866506
Rights: © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Wu et al., Appl. Phys. Lett. 86, 072904 (2005) and may be found at http://apl.aip.org/resource/1/applab/v86/i7/p072904_s1
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