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Title: Spectroellipsometric studies of sol-gel derived Sr₀.₆Ba₀.₄Nb₂O₆films
Authors: Ho, MMT
Tang, TB
Mak, CL 
Pang, GKH
Chan, KY
Wong, KH
Issue Date: 15-Oct-2006
Source: Journal of applied physics, 15 Oct. 2006, v. 100, no. 8, 083524, p. 1-5
Abstract: Sr₀.₆Ba₀.₄Nb₂O₆ (SBN) films have been fabricated on (001)Si substrates by a sol-gel technique. The annealing process was carried out in air at various temperatures ranging from 200 to 700 °C. Studies using x-ray diffractometry, high resolution transmission electron microscopy, and scanning electron microscopy showed that polycrystalline films, with a grain size of about 100 nm, were obtained only for annealing temperatures ≥ 600 °C. The optical properties of these sol-gel derived SBN films were studied by spectroscopic ellipsometry (SE). In the analysis of the measured SE spectra, a triple-layer Lorentz model has been developed and used to deduce the optical properties of the SBN films. Our systematic SE measurements revealed that the refractive indices of the SBN films increase with the annealing temperature. This increase is more pronounced at around the crystallization temperature, i.e., between 500 and 600 °C. The extinction coefficients of the films also exhibit a similar trend, showing a zero value for amorphous films and larger values for films annealed at above 600 °C. Our results demonstrate that while crystallization helps to raise the refractive index of the film due to film densification, it also promotes scattering by grain boundary, resulting in a larger extinction coefficient.
Keywords: Strontium compounds
Barium compounds
Ferroelectric thin films
Optical films
Sol-gel processing
Ellipsometry
Annealing
X-ray diffraction
Transmission electron microscopy
Scanning electron microscopy
Grain size
Refractive index
Crystallisation
Extinction coefficients
Densification
Grain boundaries
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.2356916
Rights: © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. M. T. Ho et al., J. Appl. Phys. 100, 083524 (2006) and may be found at http://link.aip.org/link/?jap/100/083524.
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