Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4038
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Title: Effects of postdeposition annealing on the dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films derived from pulsed laser deposition
Authors: Yao, Y
Lu, SG
Chen, H
Wong, KH
Issue Date: 15-Nov-2004
Source: Journal of applied physics, 15 Nov. 2004, v. 96, no. 10, p. 5830-5835
Abstract: Lanthanum-doped lead zirconate stannate titanate antiferroelectric thin films were deposited onto Pt-buffered silicon substrates using the pulsed laser deposition method. The deposition temperature was 570 °C. The postdeposition annealing process was carried out in an oxygen-flow tube furnace at temperatures ranging from 650 to 800 °C for a duration of 30 min; its effects were studied through the variations of the microstructure as well as the electrical and dielectric properties. It was found that an appropriate annealing process at temperatures above 700 °C could substantially improve the dielectric properties. However, annealing beyond 800 °C caused the film properties to deteriorate severely. Explanations were given with regard to the microstructure-property relationship.
Keywords: Lead compounds
Lanthanum compounds
Antiferromagnetic materials
Ferroelectric thin films
Pulsed laser deposition
Dielectric hysteresis
Dielectric polarisation
Leakage currents
Dielectric losses
Permittivity
Surface morphology
Annealing
Crystallisation
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.1804226
Rights: © 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Yao et al., J. Appl. Phys. 96, 5830 (2004) and may be found at http://link.aip.org/link/?jap/96/5830.
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