Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/9957
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorTai, G-
dc.creatorWang, K-
dc.creatorSun, Z-
dc.creatorYin, J-
dc.creatorNg, SM-
dc.creatorZhou, J-
dc.creatorYan, F-
dc.creatorLeung, CW-
dc.creatorWong, KH-
dc.creatorGuo, W-
dc.creatorLau, SP-
dc.date.accessioned2015-07-14T01:28:21Z-
dc.date.available2015-07-14T01:28:21Z-
dc.identifier.issn1932-7447-
dc.identifier.urihttp://hdl.handle.net/10397/9957-
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.titleNonlithographic fabrication of crystalline silicon nanodots on grapheneen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage532-
dc.identifier.epage537-
dc.identifier.volume116-
dc.identifier.issue1-
dc.identifier.doi10.1021/jp210713q-
dcterms.abstractWe report a nonlithographic fabrication method to grow uniform and large-scale crystalline silicon (Si) nanodot (c-SiNDs) arrays on single-layer graphene by an ultrathin anodic porous alumina template and Ni-induced Si crystallization technique. The lateral height of the template can be as thin as 160 nm and the crystallization of Si can be achieved at a low temperature of 400 °C. The effects of c-SiNDs on graphene were studied by Raman spectroscopy. Furthermore, the c-SiNDs/graphene based field effect transistors were demonstrated.-
dcterms.bibliographicCitationJournal of physical chemistry C, 2012, v. 116, no. 1, p. 532-537-
dcterms.isPartOfJournal of physical chemistry C-
dcterms.issued2012-
dc.identifier.isiWOS:000298978700066-
dc.identifier.scopus2-s2.0-84862942878-
dc.identifier.eissn1932-7455-
dc.identifier.rosgroupidr58798-
dc.description.ros2011-2012 > Academic research: refereed > Publication in refereed journal-
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