Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/9957
Title: Nonlithographic fabrication of crystalline silicon nanodots on graphene
Authors: Tai, G
Wang, K
Sun, Z
Yin, J
Ng, SM
Zhou, J
Yan, F 
Leung, CW 
Wong, KH
Guo, W
Lau, SP 
Issue Date: 2012
Publisher: American Chemical Society
Source: Journal of physical chemistry C, 2012, v. 116, no. 1, p. 532-537 How to cite?
Journal: Journal of physical chemistry C 
Abstract: We report a nonlithographic fabrication method to grow uniform and large-scale crystalline silicon (Si) nanodot (c-SiNDs) arrays on single-layer graphene by an ultrathin anodic porous alumina template and Ni-induced Si crystallization technique. The lateral height of the template can be as thin as 160 nm and the crystallization of Si can be achieved at a low temperature of 400 °C. The effects of c-SiNDs on graphene were studied by Raman spectroscopy. Furthermore, the c-SiNDs/graphene based field effect transistors were demonstrated.
URI: http://hdl.handle.net/10397/9957
ISSN: 1932-7447
EISSN: 1932-7455
DOI: 10.1021/jp210713q
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