Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/9547
Title: Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film
Authors: Tong, F
Liu, JD
Cheng, XM
Hao, JH 
Gao, GY
Tong, H
Miao, XS
Keywords: Chalcogenide
Lattice strain
Pulsed laser deposition
Transmission electron microscopy
Issue Date: 2014
Publisher: Elsevier
Source: Thin solid films, 2014, v. 568, no. 1, p. 70-73 How to cite?
Journal: Thin solid films 
Abstract: Wereport that the lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin films by pulsed laser deposition. The single-crystal substrates of MgO and BaF2 are designed to match the lattice of lowtemperature a-GeTe phase and high-temperature β-GeTe phase, respectively. The structures of deposited GeTe films show lattice-match dependence rather than temperature dependence. Raman analysis indicates that the a-GeTe to β-GeTe ferroelectric phase transition accompanies an increase of local six-coordinated Ge atoms, which is analogous to the phase transition from amorphous to crystalline for memory application.
URI: http://hdl.handle.net/10397/9547
ISSN: 0040-6090
EISSN: 1879-2731
DOI: 10.1016/j.tsf.2014.08.006
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