Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/9408
Title: Towards future VLSI interconnects using aligned carbon nanotubes
Authors: Chai, Y
Sun, M
Xiao, Z
Li, Y
Zhang, M
Chan, PCH 
Keywords: Breakdown
Carbon nanotube (CNT)
Chemical vapor deposition (CVD)
Contact resistance
Copper (Cu)
Electro-migration (EM)
Interconnect
Interface
Reliability
Issue Date: 2011
Source: 2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip, VLSI-SoC 2011, 2011, 6081646, p. 248-253 How to cite?
Abstract: The copper interconnects cannot keep pace with the IC interconnect requirements as the feature size continues to scale down to nanoscale. Theoretical works predicted that carbon nanotube (CNT) is more superior than copper for future VLSI interconnects in terms of electrical conductivity, thermal management and reliability. Technology breakthroughs are required to bridge the gaps between the theoretical predictions and what is achievable with current CNT technology. In this paper, we shall describe our experimental efforts on the controlled growth of aligned CNTs; the integrations of CNT interconnects with IC technology; and the electrical characterization of the CNT interconnect. We also present the electro-migration test result of CNT-based interconnects to demonstrate the potential of CNT as robust VLSI interconnects. We hope our works provide useful data on the potential of CNT for VLSI interconnect applications.
Description: 2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip, VLSI-SoC 2011, Kowloon, 3-5 October 2011
URI: http://hdl.handle.net/10397/9408
ISBN: 9781457701719
DOI: 10.1109/VLSISoC.2011.6081646
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