Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/9400
Title: RuO2-SiO2 composite thin films with wide resistivity range
Authors: Jelenkovic, EV
Tong, KY
Cheung, WY
Wong, SP
Keywords: Resistivity
Ruthenium oxide
Silicon dioxide
Sputtering
Thermal coefficient of resistance
Issue Date: 2004
Publisher: Elsevier
Source: Microelectronic engineering, 2004, v. 71, no. 3-4, p. 237-241 How to cite?
Journal: Microelectronic engineering 
Abstract: RuO2-SiO2 composite thin films were deposited on oxidised silicon wafers by reactive sputtering of Ru and quartz in argon-oxygen plasma. Post-deposition annealing was performed in a furnace in the temperature range from 200 to 600 °C in nitrogen ambient. The composition of the films was determined by Rutherford backscattering, while the crystallographic properties were monitored by X-ray diffraction and Raman spectroscopy. Electrical characterisation of the films was carried out using the Van der Pauw technique. A wide range of resistivity between 200×10-6 and 120×10-3 Ωcm was obtained by varying the proportion of SiO2 in the films. It was shown that by appropriate annealing conditions, tuning of the thermal coefficient of resistance to almost zero value could be obtained for most of the resistivity range of the investigated films.
URI: http://hdl.handle.net/10397/9400
ISSN: 0167-9317
EISSN: 1873-5568
DOI: 10.1016/j.mee.2003.12.001
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