Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/9383
Title: Thermomigration and electromigration in Sn58Bi ball grid array solder joints
Authors: Gu, X
Yung, KC 
Chan, YC
Issue Date: 2010
Publisher: Springer
Source: Journal of materials science : materials in electronics, 2010, v. 21, no. 10, p. 1090-1098 How to cite?
Journal: Journal of materials science : materials in electronics 
Abstract: In the present study, individual effect of thermomigration (TM) and combined effects of TM and electromigration (EM) in Sn58Bi ball grid array (BGA) solder joints were investigated using a particular designed daisy chain supplied with 2.5 A direct current (DC) at 110 °C. Driven by the electric current, Bi atoms migrated towards the anode side and formed a Bi-rich layer therein. With a thermal gradient, Bi atoms tended to accumulated at the low temperature side. When the effects of TM and EM were in same direction, TM assisted EM in the migration of Bi, otherwise it counteracted the effect of EM. The effect of electron charge swirling were detected when the electric current passed by the Cu trace on the top of the solder bump instead of entering into it. For the joint without current passing by or passing through, only TM induced the migration of the Bi atoms.
URI: http://hdl.handle.net/10397/9383
ISSN: 0957-4522
EISSN: 1573-482X
DOI: 10.1007/s10854-009-9992-2
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