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Title: Optical and transport properties of defective non-crystalline solids
Authors: Ong, CW 
Tsang, MP
Issue Date: 2003
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2003, v. 77, no. 7, p. 947-952 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: A method is proposed to analyze the optical absorption and electrical conductivity of non-crystalline materials having a high concentration of localized mid-gap states. The method is applied to dual ion beam deposited silicon nitride films containing various N contents. In this method, the optical absorption spectrum is fitted by using hypothetical functions of the density of states (DOS). The contribution from electron transitions between localized states is taken into account. The DOS at the Fermi level (Ef) was found to be very high (1019-1020 eV-1 cm-3), so that hopping of charge carriers around Ef dominates the transport properties. Combined with the data of electrical conductivity, the hopping distance and the spread of the electron wave function of the charge carriers at Ef are calculated. Furthermore, the temperature dependence of the mobility of the charge carriers at Ef is also deduced.
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s00339-002-1921-7
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