Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/9172
Title: High-mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma
Authors: Han, CY
Tang, WM 
Leung, CH
Che, CM
Lai, PT
Keywords: Low-frequency noise
Organic semiconductors
Passivation
Plasma treatment
TaLaO
Thin-film transistors
Issue Date: 2014
Publisher: Wiley-VCH
Source: Physica status solidi. Rapid research letters, 2014, v. 8, no. 10, p. 866-870 How to cite?
Journal: Physica status solidi. Rapid research letters 
Abstract: Pentacene thin-film transistor with high-£e TaLaO as gate dielectric has been fabricated and shows a carrier mobility of 0.73 cm2/V s, much higher than that based on pure La2O3 (0.43 cm2/V s) due to the smoother surface of the TaLaO film and thus larger pentacene islands grown on it in the initial stage. Moreover, among various times for fluorine-plasma treatment on the TaLaO gate dielectric, 100 seconds result in the highest carrier mobility of 1.12 cm2/V s due to (1) smoothest oxide surface achieved by fluorine passivation of oxide traps, as measured by AFM and supported by smallest sub-threshold swing and lowest low-frequency noise; (2) the largest pentacene grains grown on the smoothest oxide surface, as demonstrated by AFM. Pentacene islands on on TaLaO or La2O3 gate dielectric with different plasma treatment times.
URI: http://hdl.handle.net/10397/9172
ISSN: 1862-6254
EISSN: 1862-6270
DOI: 10.1002/pssr.201409261
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