Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/8276
Title: Polarization fatigue in asymmetric-field-driven ferroelectric thin films
Authors: Wang, Y
Wong, KH
Shin, FG
Choy, CL
Keywords: Asymmetric field
Fatigue
Schottky barrier
Issue Date: 2003
Publisher: Elsevier Science Bv
Source: Microelectronic engineering, 2003, v. 66, no. 1-4, p. 806-812 How to cite?
Journal: Microelectronic Engineering 
Abstract: Polarization fatigue in asymmetric-field-driven ferroelectric thin films is investigated in the present paper. The reversal of fatigue induced by the application of asymmetric voltage to the top and bottom electrodes is modeled by asymmetric Schottky voltage barrier of a quantum well structure. The fatigue behavior under various asymmetric driving voltages and asymmetric driving pulses has been studied. Theoretical calculations are shown to be in agreement with experimental results.
Description: IUMRS-ICEM 2002, Xi an, 10-14 June 2002
URI: http://hdl.handle.net/10397/8276
ISSN: 0167-9317
DOI: 10.1016/S0167-9317(02)01003-1
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