Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/82078
Title: Cutter wearing monitoring method and cutter wearing monitoring system
Other Title: 一种刀具磨损监测方法及系统
Authors: Chan, CY 
Lee, WB 
Li, LH 
Wang, ZZ 
Issue Date: 2019
Source: 中国专利 ZL 201510105515.2
Abstract: The invention provides a cutter wearing monitoring method and a cutter wearing monitoring system. The cutter wearing monitoring method comprises the following steps of performing longitudinal cutting on the machining surface of a machined sample by means of a cutter, thereby forming a machining trough, wherein the cutter is a single-point diamond cutter with a circular cutter nose; acquiring the coordinate of each drawing node of the machining trough; drawing the 3D contour of the machining trough through the coordinate of each drawing node of the machining trough; obtaining the 2D contours of cross sections of a plurality of machining troughs according to the 3D contour; measuring the actually measured cutting depth DoCm of each 2D contour; performing respective calculation for obtaining the actually measured area SM of each 2D contour; drawing a regression line of DoCM and SM<2/3> according to the actually measured areas and the actually measured cutting depths of a plurality of 2D contours, and drawing the confidence interval of the regression line; determining the sampling point (DoCM, SM<2/3>) of each 2D contour is in the confidence interval, if not, determining a fact that wearing of the cutter has caused limit of service life; and replacing the cutter. The cutter wearing monitoring method has high practicability and high automation degree.
一种刀具磨损监测方法及系统,所述方法包括以下步骤:使用刀具在加工样品的加工面上纵切,以形成加工槽;刀具为带有圆刀鼻的单点钻石刀具;获取加工槽的每一个绘图节点的坐标;并通过该加工槽的每一个绘图节点的坐标绘制该加工槽的3D轮廓;并根据该3D轮廓,获取多个加工槽横截面的2D轮廓;测量每一个2D轮廓的实测切削深度DoCM;并分别计算得到每一个2D轮廓所围的实测面积SM;根据多个2D轮廓的实测面积和实测切削深度,绘制DoCM和的回归直线,并绘制该回归直线的置信区间;判断每一个2D轮廓的采样点(DoCM,)是否处于所述置信区间中,若否,则判断该刀具已被磨损到使用寿命的极限;更换该刀具。本发明的刀具磨损监测方法实用性强和自动化程度高。
Publisher: 中华人民共和国国家知识产权局
Rights: 专利权人: 香港理工大学
Appears in Collections:Patent

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