Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/79882
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dc.contributor.authorWang, Hen_US
dc.contributor.authorNg, SMen_US
dc.contributor.authorWong, HFen_US
dc.contributor.authorWong, WCen_US
dc.contributor.authorLam, KKen_US
dc.contributor.authorLiu, YKen_US
dc.contributor.authorFei, LFen_US
dc.contributor.authorZhou, YBen_US
dc.contributor.authorMak, CLen_US
dc.contributor.authorWang, Yen_US
dc.contributor.authorLeung, CWen_US
dc.date.accessioned2018-12-21T07:13:44Z-
dc.date.available2018-12-21T07:13:44Z-
dc.date.issued2018-
dc.identifier.citationVacuum, June 2018, v. 152, p. 239-242en_US
dc.identifier.urihttp://hdl.handle.net/10397/79882-
dc.description6th IEEE International Symposium on Next-Generation Electronics (ISNE), Keelung, Taiwan, May 23-25, 2017en_US
dc.description.abstractWe deposited WS2 thin films by pulsed laser deposition on sapphire substrates at room temperature, and studied the effect of post-annealing temperature on the quality of the WS2 films. By comparing the full width-at-half-maximum of the characteristic WS2 Raman peaks, we explored the relationship between the post-annealing temperature and the crystallinity of WS2 films. Optoelectronic measurements conducted on post-annealed WS2 film-based photodetectors showed improvement with rising annealing temperatures. Our study revealed the possibility of preparing large-area dichalcogenides for optoelectronic applications.en_US
dc.description.sponsorshipDepartment of Applied Physicsen_US
dc.language.isoenen_US
dc.publisherPergamon Pressen_US
dc.relation.ispartofVacuumen_US
dc.subjectPulsed laser depositionen_US
dc.subjectPost-annealingen_US
dc.subjectRaman spectroscopyen_US
dc.subjectWS2en_US
dc.titleEffect of post-annealing on laser-ablation deposited WS2 thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage239-
dc.identifier.epage242-
dc.identifier.volume152-
dc.identifier.doi10.1016/j.vacuum.2018.03.024-
dc.identifier.isiWOS:000432499100035-
dc.identifier.scopus2-s2.0-85044471727-
dc.relation.conferenceIEEE International Symposium on Next-Generation Electronics-
dc.identifier.eissn0042-207X-
dc.identifier.rosgroupid2017002545-
dc.description.ros2017-2018 > Academic research: refereed > Publication in refereed journal-
dc.description.validate201812 bcrc-
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