Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/79882
Title: Effect of post-annealing on laser-ablation deposited WS2 thin films
Authors: Wang, H 
Ng, SM 
Wong, HF 
Wong, WC 
Lam, KK 
Liu, YK 
Fei, LF 
Zhou, YB
Mak, CL 
Wang, Y
Leung, CW 
Keywords: Pulsed laser deposition
Post-annealing
Raman spectroscopy
WS2
Issue Date: 2018
Publisher: Pergamon Press
Source: Vacuum, June 2018, v. 152, p. 239-242 How to cite?
Journal: Vacuum 
Abstract: We deposited WS2 thin films by pulsed laser deposition on sapphire substrates at room temperature, and studied the effect of post-annealing temperature on the quality of the WS2 films. By comparing the full width-at-half-maximum of the characteristic WS2 Raman peaks, we explored the relationship between the post-annealing temperature and the crystallinity of WS2 films. Optoelectronic measurements conducted on post-annealed WS2 film-based photodetectors showed improvement with rising annealing temperatures. Our study revealed the possibility of preparing large-area dichalcogenides for optoelectronic applications.
Description: 6th IEEE International Symposium on Next-Generation Electronics (ISNE), Keelung, Taiwan, May 23-25, 2017
URI: http://hdl.handle.net/10397/79882
EISSN: 0042-207X
DOI: 10.1016/j.vacuum.2018.03.024
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