Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/79767
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Xu, B | - |
dc.creator | Zhu, CJ | - |
dc.creator | He, XM | - |
dc.creator | Zang, Y | - |
dc.creator | Lin, SH | - |
dc.creator | Li, LB | - |
dc.creator | Feng, S | - |
dc.creator | Lei, QQ | - |
dc.date.accessioned | 2018-12-21T07:13:19Z | - |
dc.date.available | 2018-12-21T07:13:19Z | - |
dc.identifier.issn | 1687-8108 | en_US |
dc.identifier.uri | http://hdl.handle.net/10397/79767 | - |
dc.language.iso | en | en_US |
dc.publisher | Hindawi Publishing Corporation | en_US |
dc.rights | Copyright © 2018 Bei Xu et al. This is an open access article distributed under the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. | en_US |
dc.rights | The following publication Xu, B., Zhu, C. J., He, X. M., Zang, Y., Lin, S. H., Li, L. B., … & Lei, Q. Q. (2018). First-principles calculations on atomic and electronic properties of Ge/4H-SiC heterojunction. Advances in Condensed Matter Physics, 8010351, 1-9 is available at https://dx.doi.org/10.1155/2018/8010351 | en_US |
dc.title | First-principles calculations on atomic and electronic properties of Ge/4H-SiC heterojunction | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 1 | en_US |
dc.identifier.epage | 9 | en_US |
dc.identifier.doi | 10.1155/2018/8010351 | en_US |
dcterms.abstract | First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and total charge density are calculated. It is shown that Ge(110)/4H-SiC(0001) heterointerface possesses higher adhesion energy than that of Ge(111)/4H-SiC(0001) interface, and hence Ge/4H-SiC(0001) heterojunction with Ge[110] crystalline orientation exhibits more stable characteristics. The relaxation energy of Ge(110)/4H-SiC(0001) heterojunction interface is lower than that of Ge(111)/4HSiC( 0001) interface, indicating that Ge(110)/4H-SiC(0001) interface is easier to form at relative low temperature. The interfacial bonding is analysed using partial density of states and total charge density distribution, and the results show that the bonding is contributed by the Ge-Si bonding. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Advances in condensed matter physics, 2018, 8010351, p. 1-9 | - |
dcterms.isPartOf | Advances in condensed matter physics | - |
dcterms.issued | 2018 | - |
dc.identifier.isi | WOS:000428888900001 | - |
dc.identifier.eissn | 1687-8124 | en_US |
dc.identifier.artn | 8010351 | en_US |
dc.description.validate | 201812 bcrc | en_US |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Xu_First-principles_Calculations_Atomic.pdf | 3.86 MB | Adobe PDF | View/Open |
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