Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/79511
Title: Improved performance of pentacene OTFT by incorporating Ti in NdON gate dielectric
Authors: Ma, YX
Liu, LN
Tang, WM 
Lai, PT
Keywords: High-k
NdTiON dielectric
Organic thin-film transistor
Issue Date: 2017
Publisher: Institute of Electrical and Electronics Engineers Inc.
Source: EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits, 2017, v. 2017-January, p. 1-2 How to cite?
Abstract: Pentacene organic thin-film transistors (OTFTs) with high-k NdON gate dielectric incorporating different Ti contents are fabricated and their physical and electrical characteristics are studied. With appropriate Ti content, the OTFT with NdTiON as gate dielectric can achieve improved performance, e.g. a carrier mobility of 0.80 cm2/V·s, a small threshold voltage of -1.25 V, and a small sub-threshold swing of 0.13 V/dec. The AFM results of the pentacene layer and the dielectric layer reveal that incorporating Ti into NdON can obtain a smoother dielectric surface, which should be due to the suppressed hygroscopicity of Nd oxide caused by the Ti incorporation. Both the smoother dielectric surface and thus larger pentacene grains grown are responsible for the improved carrier mobility of the device.
Description: 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017, Hsinchu, Taiwan, 18-20 October 2017
URI: http://hdl.handle.net/10397/79511
ISBN: 9781538629079
DOI: 10.1109/EDSSC.2017.8355965
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