Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/79246
Title: A room-temperature near-infrared photodetector based on a MoS2/CdTe p-n heterojunction with a broadband response up to 1700 nm
Authors: Wang, YG
Huang, XW 
Wu, D
Zhuo, RR
Wu, EP
Jia, C
Shi, ZF
Xu, TT
Tian, YT
Li, XJ
Issue Date: 2018
Publisher: Royal Society of Chemistry
Source: Journal of materials chemistry C, 14 May 2018, v. 6, no. 18, p. 4861-4865 How to cite?
Journal: Journal of materials chemistry C 
Abstract: High-performance infrared photodetectors (PDs) have attracted much attention due to their great significance in military and industrial applications. The improvement of two-dimensional (2D) materials offers an open platform for designing various high-performance PDs, especially in the infrared region, which can overcome the drawbacks of the traditional epitaxial thin film based PDs, such as the complicated preparation processes, low-temperature operating conditions and inability to be miniaturized. In this work, a high-performance infrared PD based on a MoS2/CdTe p-n heterojunction with type-II band alignment was constructed and investigated. This PD showed a broadband photoresponse from 200 nm to 1700 nm, which is far beyond the band-gaps of MoS2 and CdTe. Moreover, a high responsivity, specific detectivity and fast response speed were achieved. These results demonstrate that the MoS2/CdTe p-n heterojunction has great potential in room-temperature infrared detection, and provide a way to design high-performance infrared PDs for other 2D materials.
URI: http://hdl.handle.net/10397/79246
ISSN: 2050-7526
EISSN: 2050-7534
DOI: 10.1039/c8tc01237g
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