Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/78942
Title: Visible-light enhanced charge storage characteristics of amorphous Ni-doped HfO2 films
Authors: Zhang, T
Zhang, Z 
Chan, CH 
Li, LT
Wei, ML
Meng, XS
Dai, JY 
Qiu, XY
Keywords: Visible light illumination
Charge storage
Ni-doped HfO2 film
Issue Date: 2018
Publisher: Institute of Physics Publishing
Source: Journal of physics. D, Applied physics, 1 Aug. 2018, v. 51, no. 30, 305105 How to cite?
Journal: Journal of physics. D, Applied physics 
Abstract: Photo-induced changes of capacitance-voltage curves for amorphous Ni-doped HfO2 films are probed under different visible light illumination conditions. The illumination-induced minority carriers injection effect enhances the negative shift of flat band voltage, and results in a significant enlargement of memory window. This enlargement exhibits negligible dependence on light wavelength but strong dependence on light intensity in the visible light region. A large memory window width of 6.12 V is obtained under illumination using 650nm red light with an intensity of 5 mW cm(-2). Acceptable endurance and retention properties show potential applications on new-type photosensitive nano-floating-gate nonvolatile memory devices.
URI: http://hdl.handle.net/10397/78942
ISSN: 0022-3727
EISSN: 1361-6463
DOI: 10.1088/1361-6463/aace65
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