Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/78678
Title: Extreme magnetoresistance and SdH oscillation in compensated semimetals of NbSb2 single crystals
Authors: Guo, L
Liu, YK 
Gao, GY
Huang, YY
Gao, H
Chen, L
Zhao, WY
Ren, W
Li, SY
Li, XG
Dong, S
Zheng, RK
Issue Date: 2018
Publisher: American Institute of Physics
Source: Journal of applied physics, 21 Apr. 2018, v. 123, no. 15, 155103 How to cite?
Journal: Journal of applied physics 
Abstract: Topological semimetals represent one of the most interesting classes of materials that continue to attract worldwide interest. Here, we report magnetotransport properties of MPn(2)-type (M = Nb, Ta; Pn = P, As, Sb) NbSb2 single-crystal semimetals with a centrosymmetric Cl2/ml space group, paramagnetic ground state, and non-saturation parabolic-like magnetoresistance. The NbSb2 crystals show metallic conductivity down to 2 K and undergo a metal-to-insulator-like transition under a magnetic field B (B >= 4 T) and exhibit a resistivity plateau in the lowtemperature region (T <= 10 K), where the value of resistivity strongly depends on the magnitude and direction of the magnetic field. Upon sweeping the magnetic field from 0 to 14.5 T in the transverse configuration at T = 1.5 K, the NbSb2 crystal shows a large positive magnetoresistance (4.2 x 10(3) % at B = 14.5 T) with Shubnikov-de Haas (SdH) oscillation. Hall measurements reveal that both the carrier compensation between electrons and holes and the high mobility and large mean free path of carriers contribute to the large magnetoresistance. Fast Fourier transform analyses of angle-resolved SdH oscillation indicate that the Fermi surface of the NbSb2 crystal is quasi-two-dimensional with three-dimensional components. These findings, together with the theoretically calculated electronic band structure obtained within the framework of density functional theory, suggest that NbSb2 is a good candidate compensated semimetal for further theoretical and experimental investigation of this family of materials. Published by AIP Publishing.
URI: http://hdl.handle.net/10397/78678
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.5021637
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